Realization of dislocation-free relaxed SiGe-on-Insulator substrates by mesa isolation

Tsutomu Tezuka; Naoharu Sugiyama; Shinich Takagi

doi:https://doi.org/10.7567/SSDM.2002.A-4-3

[A-4-3] Realization of dislocation-free relaxed SiGe-on-Insulator substrates by mesa isolation

Tsutomu Tezuka、Naoharu Sugiyama、Shinich Takagi (1.MIRAI-Project, Association of Super-Advanced Electronics Technology (ASET) Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2002.A-4-3

2002 International Conference on Solid State Devices and Materials

[A-4-3] Realization of dislocation-free relaxed SiGe-on-Insulator substrates by mesa isolation