Modified Gate Re-oxidation Technology for High Performance Embedded DRAM by Self-Adjusted Gate Bird&apos;s Beak

Y. Nishida; S. Ueno; T. Uchida; T. Terauchi; T. Tsunomura; M. Takeuchi; M. Shirahata; T. Eimori; Y. Inoue

doi:https://doi.org/10.7567/SSDM.2002.A-7-1

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[A-7-1] Modified Gate Re-oxidation Technology for High Performance Embedded DRAM by Self-Adjusted Gate Bird's Beak

Y. Nishida、S. Ueno、T. Uchida、T. Terauchi、T. Tsunomura、M. Takeuchi、M. Shirahata、T. Eimori、Y. Inoue (1.ULSI Development Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2002.A-7-1

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