Modified Gate Re-oxidation Technology for High Performance Embedded DRAM by Self-Adjusted Gate Bird&apos;s Beak

Y. Nishida; S. Ueno; T. Uchida; T. Terauchi; T. Tsunomura; M. Takeuchi; M. Shirahata; T. Eimori; Y. Inoue

doi:https://doi.org/10.7567/SSDM.2002.A-7-1

[A-7-1] Modified Gate Re-oxidation Technology for High Performance Embedded DRAM by Self-Adjusted Gate Bird's Beak

Y. Nishida, S. Ueno, T. Uchida, T. Terauchi, T. Tsunomura, M. Takeuchi, M. Shirahata, T. Eimori, Y. Inoue (1.ULSI Development Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2002.A-7-1

2002 International Conference on Solid State Devices and Materials

[A-7-1] Modified Gate Re-oxidation Technology for High Performance Embedded DRAM by Self-Adjusted Gate Bird's Beak