[A-7-2] Improvement of Disturbance/Pause Retention Time by Reducing Edge Channel Effect of Cell in Gigabit Density DRAMs and beyond

Il-Gweon Kim、Nam-Sung Kim、Young-Woo Kwon、Se-Kyung Choi、Jae-Soon Kwon、Young-Il Chun、Hee-Sik Yang、 Jooseog-Park (1.Memory R&D Division, Hynix Semiconductor Co., Ltd)

https://doi.org/10.7567/SSDM.2002.A-7-2