[A-7-2] Improvement of Disturbance/Pause Retention Time by Reducing Edge Channel Effect of Cell in Gigabit Density DRAMs and beyond

Il-Gweon Kim, Nam-Sung Kim, Young-Woo Kwon, Se-Kyung Choi, Jae-Soon Kwon, Young-Il Chun, Hee-Sik Yang, Jooseog-Park (1.Memory R&D Division, Hynix Semiconductor Co., Ltd)

https://doi.org/10.7567/SSDM.2002.A-7-2