Voltage Acceleration of Ultra-Thin Gate Oxide Degradation before and after Soft Breakdown

Takuji Hosoi; Shigeyasu Uno; Yoshinari Kamakura; Kenji Taniguchi

doi:https://doi.org/10.7567/SSDM.2002.A-8-1

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[A-8-1] Voltage Acceleration of Ultra-Thin Gate Oxide Degradation before and after Soft Breakdown

Takuji Hosoi, Shigeyasu Uno, Yoshinari Kamakura, Kenji Taniguchi (1.Dept. of Electronics and Information Systems, Graduate School of Eng., Osaka Univ.)

https://doi.org/10.7567/SSDM.2002.A-8-1

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