SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation

Yen-Po Lin; Zhi-Hao Chen; Jenn-Gwo Hwu

doi:https://doi.org/10.7567/SSDM.2002.A-9-3

[A-9-3] SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation

Yen-Po Lin、Zhi-Hao Chen、Jenn-Gwo Hwu (1.Room 446, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2002.A-9-3

2002 International Conference on Solid State Devices and Materials

[A-9-3] SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation