The Japan Society of Applied Physics

[A-9-3] SiO2/Si Suboxide Characteristics of Ultra-Thin Gate Oxides Prepared by Room Temperature Anodic Oxidation and Rapid Thermal Oxidation

Yen-Po Lin、Zhi-Hao Chen、Jenn-Gwo Hwu (1.Room 446, Department of Electrical Engineering/Graduate Institute of Electronics Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2002.A-9-3