[B-1-2] Effects of Oxynitride-Based Interface Control on HfO2 MIS Properties and FET Performance

H. Ota、N. Yasuda、T. Yasuda、Y. Morita、N. Miyata、K. Tominaga M. Kadoshima、S. Migita、T. Nabatame、A. Toriumi (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), AIST、2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), National Institute of Advanced Industrial Science and Technology (AIST)、3.Department of Materials Science, School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2002.B-1-2