Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

Hideki MURAKAMI; Wataru MIZUBAYASHI; Hirokazu YOKOI; Atsushi SUYAMA; Seiichi MIYAZAKI

doi:https://doi.org/10.7567/SSDM.2002.B-7-1

[B-7-1] Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

Hideki MURAKAMI、Wataru MIZUBAYASHI、Hirokazu YOKOI、Atsushi SUYAMA、Seiichi MIYAZAKI (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

https://doi.org/10.7567/SSDM.2002.B-7-1

2002 International Conference on Solid State Devices and Materials

[B-7-1] Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation