Impact of Thermal Budget Reduction on MOSFET Performance to Achieve High-speed and High-density DRAM-based System LSI

E. Yoshida; T. Miyashita; H. Nitta; M. Tanaka; K. Ishii; Y. Akasaka; P. H. Chou; K. Hashimoto; Y. Kohyama; T. Tanaka; Y. Nara

doi:https://doi.org/10.7567/SSDM.2002.B-9-3

[B-9-3] Impact of Thermal Budget Reduction on MOSFET Performance to Achieve High-speed and High-density DRAM-based System LSI

E. Yoshida, T. Miyashita, H. Nitta, M. Tanaka, K. Ishii, Y. Akasaka, P. H. Chou, K. Hashimoto, Y. Kohyama, T. Tanaka, Y. Nara (1.Fujitsu Laboratories Ltd., 2.Toshiba Corporation Semiconductor Company, 3.Winbond Electronics Corp.)

https://doi.org/10.7567/SSDM.2002.B-9-3

2002 International Conference on Solid State Devices and Materials

[B-9-3] Impact of Thermal Budget Reduction on MOSFET Performance to Achieve High-speed and High-density DRAM-based System LSI