Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques

C.-S. Kim; B. C. Lee; J. R. Ryu; D.-H. Lee; J.-H. Ku; S. Choi; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2002.B-9-4

[B-9-4] Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques

C.-S. Kim、B. C. Lee、J. R. Ryu、D.-H. Lee、J.-H. Ku、S. Choi、U. I. Chung、J. T. Moon (1.Process Development Team, Memory Division, Samsung Electronics Co., Ltd.、2.Advanced Process Development Project, System LSI Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2002.B-9-4

2002 International Conference on Solid State Devices and Materials

[B-9-4] Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques