Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques

C.-S. Kim; B. C. Lee; J. R. Ryu; D.-H. Lee; J.-H. Ku; S. Choi; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2002.B-9-4

[B-9-4] Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques

C.-S. Kim, B. C. Lee, J. R. Ryu, D.-H. Lee, J.-H. Ku, S. Choi, U. I. Chung, J. T. Moon (1.Process Development Team, Memory Division, Samsung Electronics Co., Ltd., 2.Advanced Process Development Project, System LSI Division, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2002.B-9-4

2002 International Conference on Solid State Devices and Materials

[B-9-4] Performance of DRAM Cell Transistor with TDSE (Thermal Desorption Silicon Etching) and Selective Si Channel Epi techniques