Direct evidence of localized states in high-k materials for gate insulator - Cathode luminescence study of HfO2 films -

Satoshi Yamasaki; J-W Park

doi:https://doi.org/10.7567/SSDM.2002.C-8-4

[C-8-4] Direct evidence of localized states in high-k materials for gate insulator - Cathode luminescence study of HfO2 films -

Satoshi Yamasaki、J-W Park (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC) National Institute of Advanced Industrial Science and Technology (AIST)、2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET))

https://doi.org/10.7567/SSDM.2002.C-8-4

2002 International Conference on Solid State Devices and Materials

[C-8-4] Direct evidence of localized states in high-k materials for gate insulator - Cathode luminescence study of HfO2 films -