0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers

Doohwan LEE; Masao SAKURABA; Junichi MUROTA; Toshiaki TSUCHIYA

doi:https://doi.org/10.7567/SSDM.2002.C-9-1

[C-9-1] 0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers

Doohwan LEE, Masao SAKURABA, Junichi MUROTA, Toshiaki TSUCHIYA (1.Laboratory for Electronic Intelligent Systems, Res. Inst. of Electr. Comm., Tohoku Univ., 2.Interdisciplinary Faculty of Science and Engineering, Shimane Univ.)

https://doi.org/10.7567/SSDM.2002.C-9-1

2002 International Conference on Solid State Devices and Materials

[C-9-1] 0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers