0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers

Doohwan LEE; Masao SAKURABA; Junichi MUROTA; Toshiaki TSUCHIYA

doi:https://doi.org/10.7567/SSDM.2002.C-9-1

[C-9-1] 0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers

Doohwan LEE、Masao SAKURABA、Junichi MUROTA、Toshiaki TSUCHIYA (1.Laboratory for Electronic Intelligent Systems, Res. Inst. of Electr. Comm., Tohoku Univ.、2.Interdisciplinary Faculty of Science and Engineering, Shimane Univ.)

https://doi.org/10.7567/SSDM.2002.C-9-1

2002 International Conference on Solid State Devices and Materials

[C-9-1] 0.1 μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers