Electrical Properties of High-k MIM Interlevel Capacitors Prepared for RF-CMOS Device Applications

M. Tarutani; K. Shintani; T. Mori; K. Nishikawa; Y. Hashizume; S. Yamakawa; H. Takada; T. Oomori

doi:https://doi.org/10.7567/SSDM.2002.C-9-5

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[C-9-5] Electrical Properties of High-k MIM Interlevel Capacitors Prepared for RF-CMOS Device Applications

M. Tarutani、K. Shintani、T. Mori、K. Nishikawa、Y. Hashizume、S. Yamakawa、H. Takada、T. Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.2002.C-9-5

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