Electrical Properties of High-k MIM Interlevel Capacitors Prepared for RF-CMOS Device Applications

M. Tarutani; K. Shintani; T. Mori; K. Nishikawa; Y. Hashizume; S. Yamakawa; H. Takada; T. Oomori

doi:https://doi.org/10.7567/SSDM.2002.C-9-5

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[C-9-5] Electrical Properties of High-k MIM Interlevel Capacitors Prepared for RF-CMOS Device Applications

M. Tarutani, K. Shintani, T. Mori, K. Nishikawa, Y. Hashizume, S. Yamakawa, H. Takada, T. Oomori (1.Advanced Technology R&D Center, Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.2002.C-9-5

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