Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS

K. Sugihara; T. Nakahata; T. Matsumoto; S. Maeda; S. Maegawa; K. Ota; H. Sayama; H. Oda; T. Eimori; Y. Abe; T. Ozeki; Y. Inoue; T. Nishimura

doi:https://doi.org/10.7567/SSDM.2002.D-1-4

[D-1-4] Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS

K. Sugihara、T. Nakahata、T. Matsumoto、S. Maeda、S. Maegawa、K. Ota、H. Sayama、H. Oda、T. Eimori、Y. Abe、T. Ozeki、Y. Inoue、T. Nishimura (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.ULSI Development Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2002.D-1-4

2002 International Conference on Solid State Devices and Materials

[D-1-4] Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS