Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS

K. Sugihara; T. Nakahata; T. Matsumoto; S. Maeda; S. Maegawa; K. Ota; H. Sayama; H. Oda; T. Eimori; Y. Abe; T. Ozeki; Y. Inoue; T. Nishimura

doi:https://doi.org/10.7567/SSDM.2002.D-1-4

[D-1-4] Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS

K. Sugihara, T. Nakahata, T. Matsumoto, S. Maeda, S. Maegawa, K. Ota, H. Sayama, H. Oda, T. Eimori, Y. Abe, T. Ozeki, Y. Inoue, T. Nishimura (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation, 2.ULSI Development Center, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.2002.D-1-4

2002 International Conference on Solid State Devices and Materials

[D-1-4] Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS