[D-2-1] High-Performance 1T1MTJ MRAM Technology with an Amorphous MTJ Material

M. Motoyoshi, K. Moriyama, H. Mori, C. Fukumoto, H. Itoh, H. Kano, K. Bessho, H. Narisawa (1.Technology Development Group, SNC, Sony Corporation, 2.LSI Design Division, Sony Semiconductor Kyushu, 3.MOS Production Division, Sony Semiconductor Kyushu, 4.Group No. 2, Storage Technology Laboratories, Sony Corporation)

https://doi.org/10.7567/SSDM.2002.D-2-1