[D-2-3] Highly Stable Etch Stopper Technology for 0.25 μm 1T1C 32Mb FRAM

N. W. Jang、Y. J. Song、S. H. Joo、K. M. Lee、H. H. Kim、H. J. Joo、J. H. Park、S. W. Lee、S. Y. Lee、Kinam Kim (1.Advanced Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2002.D-2-3