Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

Risho Koh; Yukishige Saito; Hisashi Takemura; Kohichi Arai; Mitsuru Narihiro; Hitoshi Wakabayashi; Kiyoshi Takeuchi; Tohru Mogami

doi:https://doi.org/10.7567/SSDM.2002.D-7-3

[D-7-3] Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET

Risho Koh, Yukishige Saito, Hisashi Takemura, Kohichi Arai, Mitsuru Narihiro, Hitoshi Wakabayashi, Kiyoshi Takeuchi, Tohru Mogami (1.Silicon Systems Research Laboratories, NEC Corporation, 2.R&D Support Center, NEC Corporation)

https://doi.org/10.7567/SSDM.2002.D-7-3

2002 International Conference on Solid State Devices and Materials

[D-7-3] Body Potential Design Using Narrow and Shallow Halo to Reduce the Floating Body Effect of SOI-MOSFET