[D-9-3] FD-SOI MOSFET with Self-Aligned Gate Formed on Recessed Channel

Yoshihiro Soutome、Kohji Isaji、Hitoshi Aoki、Akio Kawamura、Hideo Komiya、Katsuji Iguchi (1.Sharp Corporation, Production Engineering Center, IC Group)

https://doi.org/10.7567/SSDM.2002.D-9-3