FD-SOI MOSFET with Self-Aligned Gate Formed on Recessed Channel

Yoshihiro Soutome; Kohji Isaji; Hitoshi Aoki; Akio Kawamura; Hideo Komiya; Katsuji Iguchi

doi:https://doi.org/10.7567/SSDM.2002.D-9-3

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[D-9-3] FD-SOI MOSFET with Self-Aligned Gate Formed on Recessed Channel

Yoshihiro Soutome, Kohji Isaji, Hitoshi Aoki, Akio Kawamura, Hideo Komiya, Katsuji Iguchi (1.Sharp Corporation, Production Engineering Center, IC Group)

https://doi.org/10.7567/SSDM.2002.D-9-3

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