[D-9-4] Hot-Carrier-induced Degradation on 0.1μm Partially Depleted SOI CMOSFET with thin Oxide
Wen-Kuan Yeh、Wen-Han Wang、Yean-Kuen Fang、Fu-Liang Yang
(1.Department of Electrical Engineering, National University of Kaohsiung、2.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、3.Taiwan Semiconductor Manufacturing Company, Device Engineering Division)
https://doi.org/10.7567/SSDM.2002.D-9-4