Hot-Carrier-induced Degradation on 0.1μm Partially Depleted SOI CMOSFET with thin Oxide

Wen-Kuan Yeh; Wen-Han Wang; Yean-Kuen Fang; Fu-Liang Yang

doi:https://doi.org/10.7567/SSDM.2002.D-9-4

[D-9-4] Hot-Carrier-induced Degradation on 0.1μm Partially Depleted SOI CMOSFET with thin Oxide

Wen-Kuan Yeh、Wen-Han Wang、Yean-Kuen Fang、Fu-Liang Yang (1.Department of Electrical Engineering, National University of Kaohsiung、2.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University、3.Taiwan Semiconductor Manufacturing Company, Device Engineering Division)

https://doi.org/10.7567/SSDM.2002.D-9-4

2002 International Conference on Solid State Devices and Materials

[D-9-4] Hot-Carrier-induced Degradation on 0.1μm Partially Depleted SOI CMOSFET with thin Oxide