[E-2-3] Drain-current collapse in AlGaN/GaN HEMTs on sapphire and semi-insulating SiC substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo (1.Research Center for Micro-structure Devices, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.2002.E-2-3