[E-3-2] Suppression of B outdiffusion by C incorporation in ultra-high-speed SiGeC HBTs

Katsuya Oda、Isao Suzumura、Makoto Miura、Eiji Ohue、Reiko Hayami、Akihiro Kodama、Hiromi Shimamoto、Katsuyoshi Washio (1.Central Research Laboratory, Hitachi, Ltd.、2.Musashino Office, Hitachi Device Engineering, Co. Ltd.)

https://doi.org/10.7567/SSDM.2002.E-3-2