Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices

Marco Zeuner; Thomas Hackbarth; Mauro Enciso-Aguilar; Frederic Aniel; Hans von Kanel

doi:https://doi.org/10.7567/SSDM.2002.E-3-3

[E-3-3] Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices

Marco Zeuner、Thomas Hackbarth、Mauro Enciso-Aguilar、Frederic Aniel、Hans von Kanel (1.DaimlerChrysler AG, Research Center Ulm、2.Institut d'Electronique Fondamentale, Paris-Sud University、3.Laboratorium fur Festkorperphysik, ETH-Zurich)

https://doi.org/10.7567/SSDM.2002.E-3-3

2002 International Conference on Solid State Devices and Materials

[E-3-3] Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices