[E-3-3] Sub 100 nm Gate Technologies for Si/SiGe Buried Channel RF Devices
Marco Zeuner, Thomas Hackbarth, Mauro Enciso-Aguilar, Frederic Aniel, Hans von Kanel
(1.DaimlerChrysler AG, Research Center Ulm, 2.Institut d'Electronique Fondamentale, Paris-Sud University, 3.Laboratorium fur Festkorperphysik, ETH-Zurich)
https://doi.org/10.7567/SSDM.2002.E-3-3
