[E-3-4] Influence of SiGe Channel Position and Fowler-Nordheim Stress on 1/f Noise in SiGe pMOSFETs

Young-Joo Song、Sang-Hoon Kim、Jeong-Hoon Kim、Jong-In Song、Kyu-Hwan Shim (1.SiGe Device Team, Wireless Communication Device Research Division Electronics and Telecommunications Research Institute、2.Dept. of Information and Communications, KJIST)

https://doi.org/10.7567/SSDM.2002.E-3-4