[E-3-4] Influence of SiGe Channel Position and Fowler-Nordheim Stress on 1/f Noise in SiGe pMOSFETs

Young-Joo Song, Sang-Hoon Kim, Jeong-Hoon Kim, Jong-In Song, Kyu-Hwan Shim (1.SiGe Device Team, Wireless Communication Device Research Division Electronics and Telecommunications Research Institute, 2.Dept. of Information and Communications, KJIST)

https://doi.org/10.7567/SSDM.2002.E-3-4