[F-8-2] (0.5 x n)(2e2/h) conductance steps observed in side-gated constriction made at In0.75Ga0.25As/In0.75Al0.25As heterojunction under zero-field

Syoji Yamada、Tomohiro Kita、Masakazu Yoshitake、Hidetaka Sato、Yuuki Sato (1.Center for Nano Materials and Technology, JAIST)

https://doi.org/10.7567/SSDM.2002.F-8-2