(0.5 x n)(2e2/h) conductance steps observed in side-gated constriction made at In0.75Ga0.25As/In0.75Al0.25As heterojunction under zero-field

[F-8-2] (0.5 x n)(2e2/h) conductance steps observed in side-gated constriction made at In0.75Ga0.25As/In0.75Al0.25As heterojunction under zero-field

Syoji Yamada, Tomohiro Kita, Masakazu Yoshitake, Hidetaka Sato, Yuuki Sato (1.Center for Nano Materials and Technology, JAIST)