[G-1-3] InP-Based HEMTs with a Very Short Gate-Channel Distance

Akira Endoh, Yoshimi Yamashita, Keisuke Shinohara, Kohki Hikosaka, Toshiaki Matsui, Satoshi Hiyamizu, Takashi Mimura (1.Fujitsu Laboratories Ltd., 2.Communications Research Laboratory, 3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2002.G-1-3