[G-1-3] InP-Based HEMTs with a Very Short Gate-Channel Distance

Akira Endoh、Yoshimi Yamashita、Keisuke Shinohara、Kohki Hikosaka、Toshiaki Matsui、Satoshi Hiyamizu、Takashi Mimura (1.Fujitsu Laboratories Ltd.、2.Communications Research Laboratory、3.Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2002.G-1-3