Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology

Myounghoon Yoon; Kyounghoon Yang

doi:https://doi.org/10.7567/SSDM.2002.G-2-6

[G-2-6] Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology

Myounghoon Yoon, Kyounghoon Yang (1.Division of Electrical Engineering Dept. of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST))

https://doi.org/10.7567/SSDM.2002.G-2-6

2002 International Conference on Solid State Devices and Materials

[G-2-6] Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology