Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology

Myounghoon Yoon; Kyounghoon Yang

doi:https://doi.org/10.7567/SSDM.2002.G-2-6

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[G-2-6] Fabrication of Sub-micron Y-Gate InP MESFETs using Crystallographically Defined Contact Technology

Myounghoon Yoon、Kyounghoon Yang (1.Division of Electrical Engineering Dept. of Electrical Engineering and Computer Science Korea Advanced Institute of Science and Technology (KAIST))

https://doi.org/10.7567/SSDM.2002.G-2-6

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