Analysis of Transconductance Degradation after Endurance Cycling of Uniform F-N Flash Memories

Y. Moriyama; K. Takahashi; K. Ueda; M. Kusumi; K. Sato; I. Matsuo

doi:https://doi.org/10.7567/SSDM.2002.LB-1-1

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[LB-1-1] Analysis of Transconductance Degradation after Endurance Cycling of Uniform F-N Flash Memories

Y. Moriyama, K. Takahashi, K. Ueda, M. Kusumi, K. Sato, I. Matsuo (1.ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2002.LB-1-1

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