[LP3-2] Sub-10 nm depth ultra low resistance pn junction with antimony implantation

Hiroshi Nakao、Kenichi Okabe、Tomohiro Kubo、Youichi Momiyama、Masataka Kase (1.Fujitsu Laboratories LTD.、2.Fujitsu VLSI Process Technology Lab. LTD.、3.Fujitsu LTD. Fujitsu Akiruno Technology Center)

https://doi.org/10.7567/SSDM.2002.LP3-2