[LP3-2] Sub-10 nm depth ultra low resistance pn junction with antimony implantation
Hiroshi Nakao, Kenichi Okabe, Tomohiro Kubo, Youichi Momiyama, Masataka Kase
(1.Fujitsu Laboratories LTD., 2.Fujitsu VLSI Process Technology Lab. LTD., 3.Fujitsu LTD. Fujitsu Akiruno Technology Center)
https://doi.org/10.7567/SSDM.2002.LP3-2
