The Japan Society of Applied Physics

[LP9-1] Characterization of traps at SOI/BOX interface by back gate transconductance characteristics in SOI MOSFETs

Y. Nakajima, H. Tomita, K. Aoto, N. Ito, T. Hanajiri, T. Toyabe, T. Morikawa, T. Sugano (1.Bio-nanoelectronics Research Center, Toyo Univ.)

https://doi.org/10.7567/SSDM.2002.LP9-1