[LP9-1] Characterization of traps at SOI/BOX interface by back gate transconductance characteristics in SOI MOSFETs

Y. Nakajima、H. Tomita、K. Aoto、N. Ito、T. Hanajiri、T. Toyabe、T. Morikawa、T. Sugano (1.Bio-nanoelectronics Research Center, Toyo Univ.)

https://doi.org/10.7567/SSDM.2002.LP9-1