[P10-7] A Significant Improvement in Memory Retention of MFIS Structure for 1T-type Ferroelectric Memory by Rapid Thermal Annealing

Minoru Noda、Kazushi Kodama、Itaru Ikeuchi、Mitsue Takahashi、Masanori Okuyama (1.Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2002.P10-7