[P11-3] Uniformity improvement of SiGe HBT by reduced extrinsic base implanted damage

Li-Shyue Lai、Chieh-Shuo Liang、Yung-Tai Tseng、Zing-Wei Pei、Yu-Min Hsu、Peng-Shiu Chen、Shin-Chii Lu、Chung-Ming Liu、Ming-Jinn Tsai (1.Div. of Semiconductor Device Technology, Electronics Research and Service Organization, Industrial Technology Research Institute)

https://doi.org/10.7567/SSDM.2002.P11-3