Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide; Mitsuaki Shimizu; Shinji Hara; Dong-Hyun Cho; Kulandaivel Jeganathan; Xu-Qiang Shen; Hajime Okumura; Toshio Nemoto

doi:https://doi.org/10.7567/SSDM.2002.P11-4

[P11-4] Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide, Mitsuaki Shimizu, Shinji Hara, Dong-Hyun Cho, Kulandaivel Jeganathan, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 2.R&D Association foe Future Electron Devices (FED), Advanced Power Device laboratory, 3.Department of Science and Technology, Graduate School of Meiji University, 4.Ultra-Low-Loss Power Device Technology Research Body)

https://doi.org/10.7567/SSDM.2002.P11-4

2002 International Conference on Solid State Devices and Materials

[P11-4] Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors