The Japan Society of Applied Physics

[P11-4] Effect of AIN Spacer Layer in AlGaN/GaN Heterojunction Field Effect Transistors

Toshihide Ide, Mitsuaki Shimizu, Shinji Hara, Dong-Hyun Cho, Kulandaivel Jeganathan, Xu-Qiang Shen, Hajime Okumura, Toshio Nemoto (1.Advanced Industrial Science and Technology (AIST), Power Electronics Research Center, 2.R&D Association foe Future Electron Devices (FED), Advanced Power Device laboratory, 3.Department of Science and Technology, Graduate School of Meiji University, 4.Ultra-Low-Loss Power Device Technology Research Body)