Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications

Y. S. Lin; C. S. Chang; C. C. Wu; W. M. Chen; J. J. Liaw; C. H. Diaz

doi:https://doi.org/10.7567/SSDM.2002.P2-1

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P2-1] Low-leakage 0.11 μm CMOS for Low-Power RF-ICs and SRAMs Applications

Y. S. Lin, C. S. Chang, C. C. Wu, W. M. Chen, J. J. Liaw, C. H. Diaz (1.Department of Electrical Engineering, National Chi-Nan University, 2.Taiwan Semiconductor Manufacturing Company)

https://doi.org/10.7567/SSDM.2002.P2-1

▲