[P2-3] 1.0V High Performance Device with Reduced Parasitic Junction Capacitance and Suppressed Junction Leakage Current for 0.1μm Technology
Hyun Sik Kim, Shiang Yang Ong, Manju Sarkar, Young Way Teh, Shesh Mani Pandey, Francis Benistant, Elgin Quek, Mousumi Bhat
(1.Department of Technology Development, Chartered Semiconductor Manufacturing Ltd.)
https://doi.org/10.7567/SSDM.2002.P2-3
