[P2-4] Influence of Gate-to-Source Tunneling Current on Hot-Carrier Reliability Testing in MOSFETs with Ultra-Thin Gate Oxide

Jone F. Chen、Chih-Pin Tsao、T.-C. Ong (1.Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University、2.Logic Technology Division, TSMC)

https://doi.org/10.7567/SSDM.2002.P2-4